| Part Number | FP75R12KE3 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP75R12KE3 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung. Gatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE =. |
FP75R12KE3 Datasheet and Specifications PDF
The FP75R12KE3 is a IGBT.
Key Specifications
| Package | Module |
|---|---|
| Mount Type | Screw |
| Pins | 24 |
| Height | 17.5 mm |
| Length | 122 mm |
| Width | 62 mm |
| Max Operating Temp | 125 °C |
| Min Operating Temp | -40 °C |
| Part Number | FP75R12KE3 Datasheet |
|---|---|
| Description | IGBT |
| Manufacturer | eupec GmbH |
| Overview | Technische Information / Technical Information IGBT-Module IGBT-Modules FP75R12KE3 Vorläufige Daten Preliminary data Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum. itter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I 2t - value Tc = 80 °C TC = 25 °C tP = 1 ms, TC = 25°C TC = 80 °C VCES I C,nom. IC I CRM Ptot VGES 1200 . |