FQA12P20 Datasheet and Specifications PDF

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.

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* -12.6A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability S !
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* G DS TO-3P FQA Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD T.