FQA8N100C Datasheet
FQA8N100C Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.
* RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V, ID = 4 A
* Low Gate Charge (Typ. 53 nC)
* Low Crss (Typ. 16 pF)
* 100% Avalanche Tested
March 2014
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This adv.
FQA8N100C Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQA8N100C ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to.
*With TO-3PN packaging
*High speed switching
*Standard level gate drive
*Easy to use
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Power supply
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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