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FQP17P10 Datasheet

The FQP17P10 is a P-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberFQP17P10
Manufactureronsemi
Overview MOSFET – P-Channel, QFET) -100 V, -16.5 A, 190 mW FQP17P10 This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET.
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*16.5 A,
*100 V, RDS(on) = 190 mW (Max.) at VGS =
*10 V, ID =
*8.25 A
* Low Gate Charge (Typ. 30 nC)
* Low Crss (Typ. 100 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating
* This is a Pb
*Free Device ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Paramet.
Part NumberFQP17P10
Description100V P-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.
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* -16.5A, -100V, RDS(on) = 0.19Ω @VGS = -10 V Low gate charge ( typical 30 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G G DS TO-220 FQP Series S Absolute Maximum Ratings Symbol VDSS ID IDM.