| Part Number | FQP9N30 |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel enhancement mode power MOSFET is produced
using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce .
* 9.0 A, 300 V, RDS(on) = 450 mW (Max.) @ VGS = 10 V, ID = 4.5 A * Low Gate Charge (Typ. 17 nC) * Low Crss (Typ. 16 pF) * 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Parameter Symbol Value Unit Drain *Source Voltage Drain Current * Continuous (TC = 25°C) * C. |
FQP9N30 Datasheet
The FQP9N30 is a N-Channel MOSFET.
| Part Number | FQP9N30 |
|---|---|
| Description | 300V N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.
* * * * * * 9.0A, 300V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 17 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, . |