| Part Number | FQPF10N20C |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to .
* 9.5 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A * Low Gate Charge (Typ. 20 nC) * Low Crss (Typ. 40.5 pF) * 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This. |
FQPF10N20C Datasheet
The FQPF10N20C is a 200V N-Channel MOSFET.
| Part Number | FQPF10N20C |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FQPF10N20C
·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
p.
*With low gate drive requirements *Easy to drive *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID ID. |