| Part Number | FQPF5N60C |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to .
* 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.25 A * Low Gate Charge (Typ. 15 nC) * Low Crss (Typ. 6.5 pF) * 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Cu. |