| Part Number | FQPF7N60 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to .
* 4.3 A, 600 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 2.2 A * Low Gate Charge (Typ. 29 nC) * Low Crss (Typ. 16 pF) * 100% Avalanche Tested D GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-So. |
FQPF7N60 Datasheet
The FQPF7N60 is a 600V N-Channel MOSFET.
| Part Number | FQPF7N60 |
|---|---|
| Description | 7A N-Channel MOSFET |
| Manufacturer | OuCan |
| Overview | Product Summary The FQP7N60 & FQPF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC appli. 5 TC=25°C Power Dissipation B Derate above 25oC PD 192 38.5 1.54 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case. |