Datasheet4U Logo Datasheet4U.com

FU9024N Datasheet

The FU9024N is a IRFU9024N. Download the datasheet PDF and view key features and specifications below.

Part NumberFU9024N
ManufacturerInternational Rectifier
Overview Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with th. a k TO -2 5 1 A A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Singl.
Part NumberFU9024N
DescriptionP-Channel MOSFET
ManufacturerVBsemi
Overview FU9024N-VB FU9024N-VB Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.066 at VGS = - 10 V 0.080 at VGS = - 4.5 V ID (A)a - 20 - 18 Qg (Typ.) 40 nC FEATURES .
* TrenchFET® Power MOSFET
* 100 % UIS Tested APPLICATIONS
* Load Switch TO-251 S www.VBsemi.com G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain.

Similar Datasheets

Part Number Manufacturer Description
FU9024NPBF International Rectifier IRFU9024NPBF