The G02 is a 3.0V Primary lithium-sulfur dioxide (Li-SO2)High drain capability AA - size spiral cell.
| Max Operating Temp | 85 °C |
|---|---|
| Min Operating Temp | -25 °C |
| Part Number | G02 Datasheet |
|---|---|
| Manufacturer | SAFT |
| Overview | Primary lithium batteries G 06/2 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability AA - size spiral cell Benefits • High and stable discharge voltage • High pulse capability • Per. Cell size reference Electrical characteristics (typical values relative to cells stored for one year or less at + 30 °C max.) Nominal capacity (at 80 mA + 20°C 2.0 V cut of f. The capacity restored by the cell varies according to current drain, temperature and cut off) Open circuit voltage Nominal . |
| Part Number | G025N03T Datasheet |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Manufacturer | GOFORD |
| Overview | The G025N03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (. l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 160A < 2.8mΩ < 3.8mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Power switch l DC/DC converters Ordering Information Device G025N03T Package TO-220 Marking G025N03T TO-220 Packagin. |
| Part Number | G020N03T Datasheet |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Manufacturer | GOFORD |
| Overview | The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (. l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 140A < 2.3mΩ < 3.5mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Power switch l DC/DC converters TO-220 Ordering Information Device G020N03T Package TO-220 Marking G020N03 Packagi. |
| Part Number | G020N03D5 Datasheet |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Manufacturer | GOFORD |
| Overview | The G020N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) . l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 140A < 2mΩ < 3mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters Schematic diagram pin assignment Ordering Information Device G020N03D5 Package DFN5X6-8L Marking G020N03 . |
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| DigiKey | 195 | 1+ : 13.22 USD 5+ : 11.798 USD 10+ : 11.23 USD 25+ : 10.5148 USD |
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| DigiKey | 195 | 1+ : 13.22 USD 5+ : 11.798 USD 10+ : 11.23 USD 25+ : 10.5148 USD |
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