HEF4007UB Datasheet and Specifications PDF

HEF4007UB gates The HEF4007UB is a dual complementary pair and an inverter with access to each device. It has three n-channel and three p-channel enhancement mode MOS transistors. Fig.1 Schematic d.

es source connections to 2nd and 3rd p-channel transistors drain connections from the 1st and 2nd p-channel transistors drain connections from the 1st and 2nd n-channel transistors source connections to the 2nd and 3rd n-channel transistors common connection to the 3rd p-channel and n-channel transi.

The HEF4007UB is a dual complementary pair and an inverter with access to each device. It has three n-channel and three p-channel enhancement mode MOS transistors. It operates over a recommended VDD .

and benefits
* Fully static operation
* 5 V, 10 V, and 15 V parametric ratings
* Standardized symmetrical output characteristics
* Specified from -40 °C to +85 °C
* Complies with JEDEC standard JESD 13-B
* Inputs and outputs are protected against electrostatic effects 3 Ordering information Table.