| Part Number | HFP5N80 |
|---|---|
| Manufacturer | SemiHow |
| Overview | HFP5N80 May 2013 HFP5N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ ȍ ID = 5.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology . Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Test. |
HFP5N80 Datasheet
The HFP5N80 is a N-Channel MOSFET.
| Part Number | HFP5N80 |
|---|---|
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Manufacturer | HUASHAN ELECTRONIC |
| Overview |
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state r.
* 4.8A, 800V(See Note), RDS(on) <2.6Ω@VGS = 10 V * Fast switching * 100% avalanche tested * Improved dv/dt capability * Equivalent Type:FQP5N80 █ Maximum Ratings（Ta=25℃ unless otherwise specified） TO-220 1- G 2-D 3-S Tstg * *Storage Temperature * * * * * * * * * * * * * * * * * * * * * * * * * * * . |