| Part Number | HGT1S20N60C3S Datasheet |
|---|---|
| Manufacturer | Intersil |
| Overview | Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S December 2001 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs a. of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications. |
HGT1S20N60C3S Datasheet and Specifications PDF
The HGT1S20N60C3S is a N-Channel IGBT.
Key Specifications
| Max Operating Temp | 150 °C |
|---|---|
| Min Operating Temp | -55 °C |
| Part Number | HGT1S20N60C3S Datasheet |
|---|---|
| Description | 45A 600V UFS Series N-Channel IGBT |
| Manufacturer | Fairchild Semiconductor |
| Overview | HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs an. of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications. |