HGTG27N120BN Datasheet
HGTG27N120BN Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
HGTG27N120BN / HGT5A27N120BN Data Sheet August 2002 72A, 1200V, NPT Series N-Channel IGBT The HGTG27N120BN and HGT5A27N120BN are NonPunch Through (NPT) IGBT design. This is a new member of the MOS ga.
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: .
HGTG27N120BN Datasheet (Intersil)
Intersil
HGTG27N120BN Data Sheet January 2000 File Number 4482.3 72A, 1200V, NPT Series N-Channel IGBT The HGTG27N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high vol.
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A.
HGTG27N120BN Datasheet (onsemi)
onsemi
NPT Series N-Channel IGBT 72 A, 1200 V HGTG27N120BN The HGTG27N120BN is Non−Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the.
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
*state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: .