HGTG40N60C3 Datasheet
HGTG40N60C3 Datasheet (Intersil)
Intersil
HGTG40N60C3 Data Sheet January 2000 File Number 4472.2 75A, 600V, UFS Series N-Channel IGBT The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a .
of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applicatio.
HGTG40N60C3 Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
HGTG40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor.
of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applicatio.