HM4430 Datasheet and Specifications PDF

The+0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ●VDS =30V,ID =18A RDS(ON) .

*VDS =30V,ID =18A RDS(ON) < 7.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current Application
* Power switching application
* Hard Switched and High Frequency Circuits
* Uninterruptible Power Supply Schematic diagr.

HM4430-VB HM4430-VB Datasheet N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.004 at VGS = 10 V 0.005 at VGS = 4.5 V ID (A)a 18 16 Qg (Typ.) 6.8 nC FEATU.

* Halogen-free
* Trench Power MOSFET
* Optimized for High-Side Synchronous Rectifier Operation
* 100 % Rg Tested
* 100 % UIS Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D APPLICATIONS
* Notebook CPU Core - High-Side Switch D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless othe.