HM4454 Datasheet and Specifications PDF

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =8A RDS(ON).

* VDS = 100V,ID =8A RDS(ON) < 28mΩ @ VGS=10V (Typ:22mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current Schematic diagram Application
* DC/DC Primary Side Switch
* Telecom/Server
* Synchronous.

HM4454-VB HM4454-VB Datasheet N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.020 at VGS = 10 V 0.027 at VGS = 8 V S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D .

* Halogen-free According to IEC 61249-2-21 Definition
* Extremely Low Qgd for Switching Losses
* 100 % Rg Tested
* 100 % Avalanche Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Primary Side Switch ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Dra.