IPAN60R800CE Datasheet and Specifications PDF

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .

*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
*Veryhighcommutationruggedness
*Easytouse/drive
*Pb-freeplating,Halogenfreemoldcompound
*Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCS.

Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations fo.

*With TO-220F package
*Low input capacitance and gate charge
*Reduced switching and conduction losses
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications INCHANGE Semiconductor IPAN60R800CE
*ABSOLUTE MAXIM.