IPB021N06N3G Datasheet and Specifications PDF

The IPB021N06N3G is a Power-Transistor.

Key Specifications

PackageTO-263-3
Mount TypeSurface Mount
Max Operating Temp175 °C
Min Operating Temp-55 °C
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Part NumberIPB021N06N3G Datasheet
ManufacturerInfineon
Overview Ie\Q "%&$!"#™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &  . Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &  Q. 5BI B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q  1F1<1>3 85 D5CD54 Q) 2 6B55 @<1D9>7 + ? " , 3 ? =@<91>D Q* E1<96954.
Part NumberIPB021N06N3G Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-.
*With TO-263( D²PAK ) packaging
*High speed switching
*Low gate input resistance
*Standard level gate drive
*Easy to use
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Power supply
*Switching applications
*ABSOLUTE MAXIMUM .

Price & Availability

Seller Inventory Price Breaks Buy
Rochester Electronics 19 25+ : 1.48 USD
100+ : 1.41 USD
500+ : 1.33 USD
1000+ : 1.26 USD		 View Offer
Microchip USA 277 300+ : 9.69 USD
1000+ : 9.66 USD
10000+ : 9.63 USD		 View Offer
Worldway Electronics 11758 7+ : 0.4147 USD
10+ : 0.4064 USD
100+ : 0.3939 USD
500+ : 0.3815 USD		 View Offer

Similar Datasheets

Part Number Manufacturer Description
IPB021N06N3 Infineon Power Transistor