IPB055N03L Datasheet and Specifications PDF
The IPB055N03L is a N-Channel MOSFET.
Key Specifications
| Package | TO-263-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
IPB055N03L Datasheet
IPB055N03L Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Drain Current :ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designe.
Source Breakdown Voltage VGS= 0; ID= 1mA 30 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 1 2.2 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=30A 5.5 mΩ IGSS Gate-Body Leakage Current VGS= 20V;VDS= 0 100 nA IDSS Zero Gate Voltage Drain Current VDS= 30V; VGS= 0;Tj =25℃ VD.
IPB055N03L Datasheet (Infineon)
Infineon
Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic l.
* Fast switching MOSFET for SMPS
* Optimized technology for DC/DC converters
* Qualified according to JEDEC1) for target applications
* N-channel, logic level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* Avalanche rated
* Pb-free plating; RoHS compliant
*.