IPB200N15N3G Datasheet
IPB200N15N3G Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor IPB200N15N3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variat.
*With To-263(D2PAK) package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
.
IPB200N15N3G Datasheet (Infineon)
Infineon
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on.
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
150 V 20 mW 50 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) for target application
* Ideal .