The IPD046N08N5 is a MOSFET.
| Height | 2.5 mm |
|---|---|
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD046N08N5 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .
*N-channel,normallevel *ExcellentgatechargexRDS(on)product(FOM) *Verylowon-resistanceRDS(on) *175°Coperatingtemperature *Pb-freeleadplating;RoHScompliant *QualifiedaccordingtoJEDEC1)fortargetapplication *Idealforhigh-frequencyswitchingandsynchronousrectification. |
| Part Number | IPD046N08N5 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD046N08N5,IIPD046N08N5
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤4.6mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Static drain-source on-resistance: RDS(on)≤4.6mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 V. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Rochester Electronics | 100 | 100+ : 1.4 USD 500+ : 1.26 USD 1000+ : 1.16 USD 10000+ : 1.04 USD |
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| DigiKey | 7500 | 1+ : 3.27 USD 10+ : 2.128 USD 100+ : 1.478 USD 500+ : 1.26072 USD |
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| DigiKey | 7500 | 1+ : 3.27 USD 10+ : 2.128 USD 100+ : 1.478 USD 500+ : 1.26072 USD |
View Offer |