The IPD060N03L is a MOSFET.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.41 mm |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD060N03L Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .
*FastswitchingMOSFETforSMPS *OptimizedtechnologyforDC/DCconverters *QualifiedaccordingtoJEDEC1)fortargetapplications *N-channel,logiclevel *ExcellentgatechargexRDS(on)product(FOM) *Verylowon-resistanceRDS(on) *Avalancherated *Pb-freeplating *Halogen-freeaccordin. |
| Part Number | IPD060N03L Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD060N03L, IIPD060N03L
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤6mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.
*Static drain-source on-resistance: RDS(on)≤6mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD060N03LG | Infineon | MOSFET |