IPD075N03L Datasheet and Specifications PDF

The IPD075N03L is a N-Channel MOSFET.

Key Specifications

PackageTO-252
Mount TypeSurface Mount
Pins3
Max Operating Temp175 °C
Min Operating Temp-55 °C
Part NumberIPD075N03L Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD075N03L, IIPD075N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤7.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤7.5mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 V.
Part NumberIPD075N03L Datasheet
Description30V MOSFET
ManufacturerInfineon
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .
*FastswitchingMOSFETforSMPS
*OptimizedtechnologyforDC/DCconverters
*QualifiedaccordingtoJEDEC1)fortargetapplications
*N-channel,logiclevel
*ExcellentgatechargexRDS(on)product(FOM)
*Verylowon-resistanceRDS(on)
*Avalancherated
*Pb-freeplating;RoHScompliant
*Halog.

Price & Availability

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