The IPD110N12N3 is a MOSFET.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD110N12N3 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Power-Transistor,120V
OptiMOS™3Power-Transistor IPD_S110N12N3G
DataSheet
Rev.2.4 Final
Industrial&Multimarket
OptiMOSTM3Power.
* N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID * 175 °C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application * Halogen free according t. |
| Part Number | IPD110N12N3 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤11mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤11mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Ideal for high-frequency switching and synchronous rectification *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD110N12N3G | Infineon | MOSFET |