IPD50R280CE Datasheet and Specifications PDF

The IPD50R280CE is a N-Channel MOSFET.

Key Specifications

Mount TypeSurface Mount
Pins3
Min Operating Temp-55 °C
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Part NumberIPD50R280CE Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD50R280CE,IIPD50R280CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Static drain-source on-resistance: RDS(on)≤280mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 .
Part NumberIPD50R280CE Datasheet
DescriptionMOSFET
ManufacturerInfineon
Overview IPD50R280CE MOSFET 500VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInf.
*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
*Veryhighcommutationruggedness
*Easytouse/drive
*Pb-freeplating,Halogenfreemoldcompound
*Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCS.

Price & Availability

Seller Inventory Price Breaks Buy
Newark 2119 1+ : 2.07 USD
10+ : 1.4 USD
25+ : 1.27 USD
50+ : 1.14 USD		 View Offer
Future Electronics 2500 2500+ : 0.88 USD
5000+ : 0.865 USD
7500+ : 0.855 USD		 View Offer
Future Electronics 0 2500+ : 0.88 USD
5000+ : 0.865 USD
7500+ : 0.855 USD		 View Offer