The IPD50R520CP is a N-Channel MOSFET.
| Package | TO-252 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.41 mm |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD50R520CP Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IPD50R520CP, IIPD50R520CP
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤520mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob.
*Static drain-source on-resistance: RDS(on)≤520mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 . |
| Part Number | IPD50R520CP Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | Infineon |
| Overview |
Type
CoolMOSTM Power Transistor
Package • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfie.
ation Operating and storage temperature
P tot T C=25 °C T j, T stg
Value 7.1 4.5 15 166 0.25 2.5 50 ±20 ±30 66
-55 * 150 Unit A mJ A V/ns V W °C Rev. 2.1 page 1 2008-04-10 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse curre. |
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