IPD50R520CP Datasheet and Specifications PDF

The IPD50R520CP is a N-Channel MOSFET.

Key Specifications

PackageTO-252
Mount TypeSurface Mount
Pins3
Height2.41 mm
Length6.73 mm
Width6.22 mm
Max Operating Temp175 °C
Min Operating Temp-55 °C
Part NumberIPD50R520CP Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD50R520CP, IIPD50R520CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤520mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob.
*Static drain-source on-resistance: RDS(on)≤520mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 .
Part NumberIPD50R520CP Datasheet
DescriptionPower Transistor
ManufacturerInfineon
Overview Type CoolMOSTM Power Transistor Package • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfie. ation Operating and storage temperature P tot T C=25 °C T j, T stg Value 7.1 4.5 15 166 0.25 2.5 50 ±20 ±30 66 -55
* 150 Unit A mJ A V/ns V W °C Rev. 2.1 page 1 2008-04-10 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse curre.

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