The IPD50R800CE is a N-Channel MOSFET.
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD50R800CE Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD50R800CE,IIPD50R800CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤800mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Static drain-source on-resistance: RDS(on)≤800mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 . |
| Part Number | IPD50R800CE Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Infineon |
| Overview |
IPD50R800CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInf.
*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss *Veryhighcommutationruggedness *Easytouse/drive *Pb-freeplating,Halogenfreemoldcompound *Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCS. |
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