IPD60R170CFD7 Datasheet and Specifications PDF

The IPD60R170CFD7 is a N-Channel MOSFET.

Key Specifications

Height2.48 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
🏠
Part NumberIPD60R170CFD7 Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD60R170CFD7,IIPD60R170CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤170mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for r.
*Static drain-source on-resistance: RDS(on)≤170mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.
Part NumberIPD60R170CFD7 Datasheet
DescriptionMOSFET
ManufacturerInfineon
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .
*Ultra-fastbodydiode
*Lowgatecharge
*Best-in-classreverserecoverycharge(Qrr)
*ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness
*LowestFOMRDS(on)*QgandRDS(on)*Eoss
*Best-in-classRDS(on)inSMDandTHDpackages Benefits
*Excellenthardcommutationruggedness
*Highestreli.

Price & Availability

Seller Inventory Price Breaks Buy
Newark 167 1+ : 3.34 USD
10+ : 2.3 USD
25+ : 2.1 USD
50+ : 1.9 USD		 View Offer
Chip One Stop 1652 1+ : 2.95 USD
10+ : 1.92 USD
50+ : 1.91 USD
100+ : 1.51 USD		 View Offer
Rochester Electronics 556 100+ : 1.21 USD
500+ : 1.09 USD
1000+ : 1 USD
10000+ : 0.8954 USD		 View Offer