IPD60R180C7 Datasheet and Specifications PDF

The IPD60R180C7 is a N-Channel MOSFET.

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Part NumberIPD60R180C7 Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD60R180C7，IIPD60R180C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.18Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Static drain-source on-resistance: RDS(on)≤0.18Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Suitable for hard and soft switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain.
Part NumberIPD60R180C7 Datasheet
Description600V MOSFET
ManufacturerInfineon
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .
*Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
*IncreasedMOSFETdv/dtruggednessto120V/ns
*IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
*BestinclassRDS(on)/package Benefits
*IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesi.