Part Number	IPD60R1K0CE Datasheet
Manufacturer	Inchange Semiconductor
Overview	isc N-Channel MOSFET Transistor IPD60R1K0CE,IIPD60R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d. *Static drain-source on-resistance: RDS(on)≤1Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS.