IPD60R1K4C6 Datasheet and Specifications PDF

The IPD60R1K4C6 is a Power Transistor.

Key Specifications

PackageTO-252-3
Mount TypeSurface Mount
Pins3
Max Operating Temp150 °C
Min Operating Temp-55 °C
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Part NumberIPD60R1K4C6 Datasheet
ManufacturerInfineon
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Part NumberIPD60R1K4C6 Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD60R1K4C6,IIPD60R1K4C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤1.4Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 V.

Price & Availability

Seller Inventory Price Breaks Buy
Newark 5452 1+ : 1.3 USD
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Future Electronics 2500 2500+ : 0.735 USD
5000+ : 0.725 USD
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10000+ : 0.71 USD		 View Offer
Future Electronics 0 2500+ : 0.735 USD
5000+ : 0.725 USD
7500+ : 0.72 USD
10000+ : 0.71 USD		 View Offer