The IPD60R1K5CE is a N-Channel MOSFET.
| Mount Type | Surface Mount |
|---|---|
| Height | 2.55 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -40 °C |
| Part Number | IPD60R1K5CE Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD60R1K5CE,IIPD60R1K5CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1.5Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤1.5Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 V. |
| Part Number | IPD60R1K5CE Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Infineon |
| Overview |
IPD60R1K5CE,IPU60R1K5CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pio.
*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss *Veryhighcommutationruggedness *Easytouse/drive *Pb-freeplating,Halogenfreemoldcompound *Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCS. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 1597 | 1+ : 0.978 USD 10+ : 0.64 USD 25+ : 0.574 USD 50+ : 0.509 USD |
View Offer |
| Chip One Stop | 1500 | 5+ : 0.898 USD 50+ : 0.56 USD 100+ : 0.364 USD 200+ : 0.362 USD |
View Offer |
| Rochester Electronics | 1583 | 100+ : 0.2363 USD 500+ : 0.2127 USD 1000+ : 0.1961 USD 10000+ : 0.1749 USD |
View Offer |