IPD60R280CFD7 Datasheet and Specifications PDF

The IPD60R280CFD7 is a Power-Transistor.

Key Specifications

Max Operating Temp150 °C
Min Operating Temp-55 °C
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Part NumberIPD60R280CFD7 Datasheet
ManufacturerInfineon
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .
*Ultra-fastbodydiode
*Lowgatecharge
*Best-in-classreverserecoverycharge(Qrr)
*ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness
*LowestFOMRDS(on)*QgandRDS(on)*Eoss
*Best-in-classRDS(on)inSMDandTHDpackages Benefits
*Excellenthardcommutationruggedness
*Highestreli.
Part NumberIPD60R280CFD7 Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD60R280CFD7，IIPD60R280CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.28Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for r.
*Static drain-source on-resistance: RDS(on)≤0.28Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.

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