The IPD60R280P7 is a N-Channel MOSFET.
| Height | 2.48 mm |
|---|---|
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD60R280P7 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD60R280P7，IIPD60R280P7
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.28Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Static drain-source on-resistance: RDS(on)≤0.28Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Suitable for a wide variety of applications and power ranges *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM. |
| Part Number | IPD60R280P7 Datasheet |
|---|---|
| Description | Power-Transistor |
| Manufacturer | Infineon |
| Overview |
IPD60R280P7
MOSFET
600VCoolMOSªP7PowerTransistor
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)pr.
*Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness *Significantreductionofswitchingandconductionlosses *ExcellentESDrobustness>2kV(HBM)forallproducts *BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A. |
| Seller | Inventory | Price Breaks | Buy |
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| Newark | 3019 | 1+ : 2.25 USD 10+ : 1.53 USD 25+ : 1.39 USD 50+ : 1.25 USD |
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| Rochester Electronics | 3735 | 100+ : 0.7505 USD 500+ : 0.6754 USD 1000+ : 0.6229 USD 10000+ : 0.5554 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD60R280P7S | Infineon | Power-Transistor |
| IPD60R280P7S | Inchange Semiconductor | N-Channel MOSFET |