The IPD60R280P7S is a Power-Transistor.
| Height | 2.55 mm |
|---|---|
| Max Operating Temp | 150 °C |
| Min Operating Temp | -40 °C |
| Part Number | IPD60R280P7S Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
IPD60R280P7S
MOSFET
600VCoolMOSªP7PowerTransistor
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)p.
*Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness *Significantreductionofswitchingandconductionlosses *ExcellentESDrobustness>2kV(HBM)forallproducts *BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A. |
| Part Number | IPD60R280P7S Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD60R280P7S，IIPD60R280P7S
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.28Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob.
*Static drain-source on-resistance: RDS(on)≤0.28Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Suitable for hard and soft switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain. |
| Seller | Inventory | Price Breaks | Buy |
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| Avnet | 5000 | 2500+ : 0.33874 USD 5000+ : 0.33021 USD 10000+ : 0.32168 USD 20000+ : 0.31316 USD |
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| Chip One Stop | 1295 | 5+ : 1.43 USD 10+ : 0.96 USD 50+ : 0.874 USD 100+ : 0.649 USD |
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| Rochester Electronics | 14230 | 100+ : 0.5153 USD 500+ : 0.4638 USD 1000+ : 0.4277 USD 10000+ : 0.3813 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD60R280P7 | Inchange Semiconductor | N-Channel MOSFET |
| IPD60R280P7 | Infineon | Power-Transistor |