The IPD60R380C6 is a MOSFET.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD60R380C6 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6600V 600VCoolMOS™C6PowerTransistor IPx60R380C6 DataSheet Rev.2.4 Final PowerManagement&Multimarket -''H 6YYV@BEc 6- CY`O[. strial Applications AL>EI ZSX ) D>NB ZSX ( .KKGE@>NEJIM J@= fgTZXf& [TeW fj\gV[\aZ JPG fgTZXf TaW eXfbaTag fj\gV[\aZ JPG fgTZXf Ybe X(Z( J= L\_iXeUbk& ;WTcgXe& F=> " J>J MO& F\Z[g\aZ& LXeiXe& ELRLJUS and NJL( MJOL@B ZSX * (61-=1 89>1" $9< &'*$#+ ;-<-6616583 >41 ?=1 92 21<<5>1 .1-0= 98 >41 3->1 9. |
| Part Number | IPD60R380C6 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Static drain-source on-resistance: RDS(on)≤0.38Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 . |
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