The IPD60R3K3C6 is a MOSFET.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.41 mm |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD60R3K3C6 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6600V
600VCoolMOS™C6PowerTransistor IPD60R3K3C6
DataSheet
Rev.2.3 Final
Industrial&Multimarket
+<<9#%(F& |
| Part Number | IPD60R3K3C6 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD60R3K3C6,IIPD60R3K3C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤3.3Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 V. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Avnet | 1860 | 1+ : 1.01 USD 10+ : 0.592 USD 25+ : 0.536 USD 50+ : 0.478 USD |
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| Avnet | 0 | 2500+ : 0.26072 USD 5000+ : 0.25056 USD 10000+ : 0.24041 USD 20000+ : 0.23025 USD |
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| Newark | 1860 | 1+ : 0.085 USD 10+ : 0.085 USD 25+ : 0.085 USD 50+ : 0.085 USD |
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