IPD60R3K4CE Datasheet and Specifications PDF

The IPD60R3K4CE is a N-Channel MOSFET.

Key Specifications

PackageTO-252-3
Mount TypeSurface Mount
Height2.55 mm
Max Operating Temp150 °C
Min Operating Temp-40 °C
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Part NumberIPD60R3K4CE Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD60R3K4CE,IIPD60R3K4CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤3.4Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 V.
Part NumberIPD60R3K4CE Datasheet
DescriptionMOSFET
ManufacturerInfineon
Overview IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE MOSFET 600VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)prin.
*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
*Veryhighcommutationruggedness
*Easytouse/drive
*Pb-freeplating,Halogenfreemoldcompound
*Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCS.

Price & Availability

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DigiKey 3116 1+ : 0.73 USD
10+ : 0.45 USD
100+ : 0.2897 USD
500+ : 0.22044 USD		 View Offer