The IPD60R600C6 is a MOSFET.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD60R600C6 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6600V 600VCoolMOS™C6PowerTransistor IPx60R600C6 DataSheet Rev.2.6 Final PowerManagement&Multimarket -''H 6YYV@BEc 6- CY`O[. fj\gV[\aZ JPG fgTZXf TaW eXfbaTag fj\gV[\aZ JPG fgTZXf Ybe X(Z( J= L\_iXeUbk& ;WTcgXe& F=> " J>J MO& F\Z[g\aZ& LXeiXe& MX_XVb` and NJL( =C7-'D-''6-# =C5-'D-''6=CC-'D-''6-# =C4-'D-''6- AL>EI ZSX ) D>NB ZSX ( MJOL@B ZSX * J_XTfX abgX4 @be GIL@?M cTeT__X_\aZ g[X hfX bY YXee\gX UXTWf ba g[X ZTgX b. |
| Part Number | IPD60R600C6 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤0.6Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 V. |
| Seller | Inventory | Price Breaks | Buy |
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| Newark | 4580 | 1+ : 1.85 USD 10+ : 1.17 USD 100+ : 0.789 USD 500+ : 0.623 USD |
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| Arrow Electronics | 2500 | 2500+ : 0.5001 USD | View Offer |