IPD60R600CP Datasheet and Specifications PDF

The IPD60R600CP is a Power Transistor.

Key Specifications

PackageTO-252-3
Pins3
Max Operating Temp175 °C
Min Operating Temp-55 °C
Part NumberIPD60R600CP Datasheet
ManufacturerInfineon
Overview IPD60R600CP CoolMOS® Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for tar.
* Lowest figure-of-merit R ON x Qg
* Ultra low gate charge
* Extreme dv/dt rated
* High peak current capability
* Qualified according to JEDEC1) for target applications
* Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max @ Tj =25°C Q g,typ 650 0.6 21 V Ω nC PG-TO252 .
Part NumberIPD60R600CP Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤0.6Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source V.

Price & Availability

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Rochester Electronics 14945 100+ : 0.7792 USD
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