The IPD60R600E6 is a MOSFET.
| Mount Type | Surface Mount |
|---|---|
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD60R600E6 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" E6 series combines the ex.
* Extremely low losses due to very low FOM Rdson*Qg and Eoss * Very high commutation ruggedness * Easy to use/drive * JEDEC1) qualified, Pb-free plating, halogen free (excluding TO-252) Applications PFC stages, hard switching PWM stages and reson. |
| Part Number | IPD60R600E6 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD60R600E6,IIPD60R600E6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤0.6Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 V. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Rochester Electronics | 1899 | - | View Offer |
| Avnet | 0 | - | View Offer |
| Farnell | 0 | 2500+ : 0.408 GBP | View Offer |