IPD60R600P6 Datasheet and Specifications PDF

The IPD60R600P6 is a N-Channel MOSFET.

Key Specifications

PackageTO-252-3
Mount TypeSurface Mount
Pins3
Height2.41 mm
Length6.73 mm
Width6.22 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
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Part NumberIPD60R600P6 Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD60R600P6,IIPD60R600P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤0.6Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 V.
Part NumberIPD60R600P6 Datasheet
DescriptionMOSFET
ManufacturerInfineon
Overview CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe ex.
*IncreasedMOSFETdv/dtruggedness
*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
*Veryhighcommutationruggedness
*Easytouse/drive
*Pb-freeplating,Halogenfreemoldcompound
*QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Applications PFC.

Price & Availability

Seller Inventory Price Breaks Buy
Rochester Electronics 5037 100+ : 0.5269 USD
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DigiKey 4486 1+ : 1.61 USD
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500+ : 0.53426 USD		 View Offer
DigiKey 4486 1+ : 1.61 USD
10+ : 1.017 USD
100+ : 0.6793 USD
500+ : 0.53426 USD		 View Offer