The IPD60R600P7 is a N-Channel MOSFET.
| Height | 2.55 mm |
|---|---|
| Max Operating Temp | 150 °C |
| Min Operating Temp | -40 °C |
| Part Number | IPD60R600P7 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD60R600P7,IIPD60R600P7
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤0.6Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 V. |
| Part Number | IPD60R600P7 Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Infineon |
| Overview |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .
*Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness *Significantreductionofswitchingandconductionlosses *ExcellentESDrobustness>2kV(HBM)forallproducts *BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 222 | 1+ : 1.15 USD 10+ : 0.756 USD 25+ : 0.68 USD 50+ : 0.603 USD |
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| Newark | 0 | 2500+ : 0.345 USD 5000+ : 0.335 USD 10000+ : 0.324 USD 15000+ : 0.313 USD |
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| Future Electronics | 15000 | 2500+ : 0.225 USD 10000+ : 0.22 USD 37500+ : 0.215 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD60R600P7S | Inchange Semiconductor | N-Channel MOSFET |
| IPD60R600P7S | Infineon | Power-Transistor |