Part Number	IPD60R750E6 Datasheet
Manufacturer	Inchange Semiconductor
Overview	isc N-Channel MOSFET Transistor IPD60R750E6,IIPD60R750E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.75Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus. *Static drain-source on-resistance: RDS(on)≤0.75Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High peak current capability *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source .