IPD60R800CE Datasheet and Specifications PDF

The IPD60R800CE is a N-Channel MOSFET.

Key Specifications

Mount TypeSurface Mount
Height2.55 mm
Max Operating Temp150 °C
Min Operating Temp-40 °C
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Part NumberIPD60R800CE Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD60R800CE,IIPD60R800CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤0.8Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 V.
Part NumberIPD60R800CE Datasheet
DescriptionMOSFET
ManufacturerInfineon
Overview IPD60R800CE,IPA60R800CE MOSFET 600VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pio.
*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
*Veryhighcommutationruggedness
*Easytouse/drive
*Pb-freeplating,Halogenfreemoldcompound
*Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCS.

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