IPD65R1K0CE Datasheet and Specifications PDF

The IPD65R1K0CE is a N-Channel MOSFET.

Key Specifications

PackageTO-252-3
Mount TypeSurface Mount
Max Operating Temp150 °C
Min Operating Temp-55 °C
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Part NumberIPD65R1K0CE Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD65R1K0CE,IIPD65R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.
*Static drain-source on-resistance: RDS(on)≤1Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*Very high commutation ruggedness
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VD.
Part NumberIPD65R1K0CE Datasheet
DescriptionMOSFET
ManufacturerInfineon
Overview IPD65R1K0CE MOSFET 650VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInf.
*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
*Veryhighcommutationruggedness
*Easytouse/drive
*Pb-freeplating,Halogenfreemoldcompound
*Qualifiedforstandardgradeapplications Applications PCSilverbox,Adapters,LCD&PDPTVandindoorLighting Pleasenote:ForMOSFET.

Price & Availability

Seller Inventory Price Breaks Buy
Rochester Electronics 33622 100+ : 0.3787 USD
500+ : 0.3408 USD
1000+ : 0.3143 USD
10000+ : 0.2802 USD		 View Offer
Farnell 0 1+ : 0.585 GBP View Offer
Farnell 0 500+ : 0.585 GBP View Offer