IPD65R1K4C6 Datasheet and Specifications PDF

The IPD65R1K4C6 is a N-Channel MOSFET.

Key Specifications

PackageTO-252-3
Mount TypeSurface Mount
Pins3
Max Operating Temp150 °C
Min Operating Temp-55 °C
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Part NumberIPD65R1K4C6 Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD65R1K4C6,IIPD65R1K4C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤1.4Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*Very high commutation ruggedness
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .
Part NumberIPD65R1K4C6 Datasheet
DescriptionMOSFET
ManufacturerInfineon
Overview CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinesthe ex.
*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
*Veryhighcommutationruggedness
*Easytouse/drive
*Pb-freeplating,Halogenfreemoldcompound
*QualifiedforindustrialgradeapplicationsaccordingtoJE.

Price & Availability

Seller Inventory Price Breaks Buy
Rochester Electronics 630 100+ : 0.424 USD
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DigiKey 11281 1+ : 1.47 USD
10+ : 0.926 USD
100+ : 0.6135 USD
500+ : 0.4792 USD		 View Offer
DigiKey 11281 1+ : 1.47 USD
10+ : 0.926 USD
100+ : 0.6135 USD
500+ : 0.4792 USD		 View Offer