The IPD65R400CE is a N-Channel MOSFET.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.4 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD65R400CE Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD65R400CE,IIPD65R400CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤0.4Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *Very high commutation ruggedness *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE . |
| Part Number | IPD65R400CE Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Infineon |
| Overview |
IPD65R400CE,IPS65R400CE
MOSFET
650VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pio.
*ExtremelylowlossesduetoverylowFOMRdson*QgandEoss *Veryhighcommutationruggedness *Easytouse/drive *JEDECqualfied,Pb-freeplating,Halogenfreemoldcompound *Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstag. |
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| Future Electronics | 2500 | 2500+ : 0.855 USD 5000+ : 0.845 USD 7500+ : 0.83 USD |
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| Future Electronics | 0 | 2500+ : 0.855 USD 5000+ : 0.845 USD 7500+ : 0.83 USD |
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