IPD65R600C6 Datasheet and Specifications PDF

The IPD65R600C6 is a Power Transistor.

Key Specifications

PackageTO-252-3
Mount TypeSurface Mount
Pins3
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberIPD65R600C6 Datasheet
ManufacturerInfineon
Overview GIM@?N + =L 9 D- PA <= 1 =E A ;G F > =;L2J 9 FK A K L G J !GGD+ - 1 !    4 !G G D + - 1 Y ! . G O=J2J 9 FK A K L G J '. P  0    ! "9 L 91 @==L 0 =N        . G FD G K K =KE 9 C =K OA L ;@A F? 9 HHD A ;9 L A G FK=N=F E G J = => > A ;A =FL EG J = ;G E H9 ;L D A ?@L =J 9 F< ;G G D =J ;PL^_\P] X X X t # PL J =E =D QD G OD G K K =K?=+$ I M9 D A.
Part NumberIPD65R600C6 Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD65R600C6,IIPD65R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤0.6Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 V.

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