The IPD65R600C6 is a Power Transistor.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD65R600C6 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
GIM@?N
+ =L 9 D- PA <= 1 =E A ;G F |
| Part Number | IPD65R600C6 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD65R600C6,IIPD65R600C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤0.6Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 V. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Rochester Electronics | 15479 | 100+ : 0.7265 USD 500+ : 0.6539 USD 1000+ : 0.603 USD 10000+ : 0.5376 USD |
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| Win Source | 16800 | 175+ : 0.3361 USD 420+ : 0.276 USD 650+ : 0.268 USD 895+ : 0.2587 USD |
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| Win Source | 5 | 55+ : 1.0547 USD 135+ : 0.8655 USD 210+ : 0.8383 USD 285+ : 0.8113 USD |
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